Poh Chuan Ang

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The gate oxide integrity of oxide thickness 13.5 nm has been studied for different amorphous poly deposition conditions. The poly grain was varied by the poly deposition conditions. The study, which was carried out on BiCMOS devices, showed substantial reliability degradation in the gate oxides when using amorphous poly deposition at temperatures of 550(More)
Samples prepared for SEM imaging after Focused Ion Beam (FIB) milling often require staining or delineation on the cross section to distinguish the different layers/features of the device structure. Wet staining using Buffered Oxide Etch (BOE), is one of the most common and economical decoration methods. Since wet etching is difficult to control, artifacts(More)
The passivation or glassivation of a die seals the top metallization of a micro device from moisture and mobile contaminants. It also prevents the die from mechanical and chemical damage during final assembly. Because of its importance, the passivation should be care fully assessed for thickness, cove rage and integrity. A passivation integrity test is(More)
Device characterization and failure analysis of micro-electro-mechanical systems (MEMS) devices are vital steps to improve the device performance and understand the root cause of low yield. Challenges are often encountered when applying most traditional failure analysis or sample preparation methods on MEMS devices. Due to the cavities and the(More)
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