Po-Wei Liu

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Detailed studies are reported on the photoluminescence of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy(More)
The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-N(+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Gamma to L valley of the semiconductor, the amplitude is proportional to(More)
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