Po-Ta Chen

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The surface cleaning of InGaAs and InAlAs is studied using Synchrotron Radiation Photoelectron Spectroscopy. Thermal annealing at 400 o C can not completely remove the native oxides from those surfaces. Elemental arsenic build-up is observed on both surfaces after acid treatment using HCl, HF or H 2 SO 4 solutions, which is similar to acid-cleaned GaAs(More)
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