Po-Sheng Wang

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The transient ultraviolet (UV) and visible luminescent dynamics of the metal-oxide-semiconductor light-emitting diodes (MOSLEDs) made on Si-rich SiO<sub>x</sub> with its O/Si composition ratio detuning from 0.75 to 1.62 are investigated. The size and luminescent wavelength of the buried Si quantum dots (Si-QDs) are controlled by adjusting the O/Si(More)
We demonstrate high-efficiency small-molecule-based white phosphorescent organic light emitting diodes (PHOLEDs) by single-active-layer solution-based processes with the current efficiency of 17.3 cdA(-1) and maximum luminous efficiency of 8.86 lmW(-1) at a current density of 1 mA cm(-2). The small-molecule based emitting layers are codoped with blue and(More)
Pretreatment of the indium tin oxide (ITO) surface is generally adopted to improve the charge injection and device performance in the fabrication of organic light-emitting diodes (OLEDs). For the common approaches of surface treatment, such as oxygen plasma treatment, self-assembled monolayer (SAM) adsorption, and the PEDOT:PSS coating, different effects on(More)
The traditional brain-computer interface (BCI) system measures the electroencephalography (EEG) signals by the wet sensors with the conductive gel and skin preparation processes. To overcome the limitations of traditional BCI system with conventional wet sensors, a wireless and wearable multi-channel EEG-based BCI system is proposed in this study, including(More)
The bottom-gate nc-Si based thin-film-transistors (TFTs) grown by using the low-temperature plasma-enhanced chemical vapor deposition (LT-PECVD) system with He diluted SiH are demonstrated. With the RF plasma power increasing from 20 to 100 W, the crystalline volume ratio of the nc-Si inside the a-Si:H film significantly increases from 12.5% to 32%, and its(More)
In this work, we demonstrated an inverted planar heterojunction organic photovoltaic (OPV) device with boron subphthalocyanine (SubPc) material. In this device, ZnO was used as the electron extraction layer, which was coated with ethoxylated polyethylenimine (PEIE) for smoothen the ZnO surface. Open circuit voltage of this OPV can be as high as 1.36 eV,(More)
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