Po-Hsun Ho

  • Citations Per Year
Learn More
A unique "clean-lifting transfer" (CLT) technique that applies a controllable electrostatic force to transfer large-area and high-quality CVD-grown graphene onto various rigid or flexible substrates is reported. The CLT technique without using any organic support or adhesives can produce residual-free graphene films with large-area processability, and has(More)
This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated doping layers of titanium suboxide (TiOx) thin films, which are an amorphous phase of crystalline TiO(2) and can be solution processed. The nonstoichiometry TiOx thin films consisting of a large(More)
In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping, suppressed(More)
Graphene, with cracks filled with gold nanoparticles, is grown by chemical vapor deposition on a Cu substrate. The crack-filled graphene not only exhibits superior electrical properties but also forms a better junction with other semiconductors. A high-quality crack-filled graphene/Si Schottky junction solar cell is achieved, demonstrating the highest fill(More)
Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced(More)
In search of high-performance field-effect transistors (FETs) made of atomic thin semiconductors, indium selenide (InSe) has held great promise because of its high intrinsic mobility and moderate electronic band gap (1.26 eV). Yet the performance of InSe FETs is decisively determined by the surface oxidation of InSe taking place spontaneously in ambient(More)
Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the(More)
A novel organic/graphene/inorganic -heterostructure, consisting of a graphene layer encapsulated by n- and p-type photoactive materials with complementary absorptions, enables the control of dual n- and p-typed transport behaviors of a graphene transistor under selective UV or visible light illumination. A graphene-based p-n junction created by spatially(More)
Two-dimensional (2D) materials are composed of atomically thin crystals with an enormous surface-to-volume ratio, and their physical properties can be easily subjected to the change of the chemical environment. Encapsulation with other layered materials, such as hexagonal boron nitride, is a common practice; however, this approach often requires(More)
Low-dimensional plasmonic materials can function as high quality terahertz and infrared antennas at deep subwavelength scales. Despite these antennas' strong coupling to electromagnetic fields, there is a pressing need to further strengthen their absorption. We address this problem by fabricating thick films of aligned, uniformly sized semiconducting carbon(More)
  • 1