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This paper presents the design and measurement of a V-band frequency doubler in 90nm IBM CMOS process. The doubler employs active multiplying architecture to generate harmonics of input fundamental signal, and distributed passive microstrip line to suppress unwanted signals. This doubler has the advantage of low power consumption, relatively low conversion(More)
SUMMARY In this paper, the research advances in silicon based millimeter wave and THz ICs in the State Key Laboratory of Millimeter Waves is reviewed, which consists of millimeter wave amplifiers, mixers, oscilla-tors at Q, V and W and D band based on CMOS technology, and several research approaches of THz passive ICs including cavity and filter structures(More)
In this paper, a fourth-order single-layered substrate integrated waveguide (SIW) quasi-elliptic filter with inline resonator arrangement is proposed. Transmission zeros (TZs) are introduced by the cross-coupling between higher/lower order modes in the SIW cavities to realize the quasi-elliptic function response and high stopband rejection of the filter.(More)
This paper presents the design and measurement of V-band low noise amplifiers. The amplifiers employ common-source structure and hybrid matching topology for reducing the signal loss and improve return loss. To verify the design, an one-stage low noise amplifier (LNA) and a three-stage LNA are fabricated by using 90nm IBM CMOS process. The measured gain of(More)
This paper presents the design and measurement of an integrated voltage controlled oscillator (VCO). This VCO employs cross-coupled structure and improves the bias supply circuit to get a better phase noise. The VCO was implemented using 0.13 um IBM CMOS process. The oscillation frequency is around 26 GHz, targeting at the millimeter wave communication and(More)
In this paper a wideband omnidirectional printed dipole array antenna with high gain is proposed by cascading the double side printed twin dipoles. The measured relative bandwidth for VSWR<1.5 or S11<-14 dB reaches 10% (3893 MHz~4314 MHz), and the measured gain is in a range of 7.71~9.31 dB, with a variation of 1.6 dB.
The terahertz technique has been a hot research topic in recent years owing to its unique characteristics for potential applications such as high resolution spectrometers and high data rate space communications. Rapidly growing research activities from worldwide researchers have been involved in developing terahertz components. This paper reports some(More)
A 2×2 pixel array for Sub-THz detection in which each pixel can be separately addressed has been integrated in a low-cost 0.18μm CMOS technology. Each pixel comprises of an NMOS incoherent power detection circuit and a high gain operational amplifier. Efficiency of self-mixing is analyzed and improved for FET detector and the operational(More)
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