Pilsoon Choi

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A physics-based compact transport and charge model for RF-GaN HEMTs has been developed, including device self-heating, non-linear access region behavior, noise, etc. The model is validated against(More)
This study is a first demonstration of the use of a physical compact model as a tool to identify technology bottlenecks to the linearity performance of emerging devices such as GaN HEMTs and to(More)