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A 5.5 GHz fully integrated low-power ESD-protected low-noise amplifier (LNA), designed and verified in a 90 nm RF CMOS technology, is presented for the first time. This 9.7 mW LNA features a 13.3 dB power gain with a noise figure of 2.9 dB, while maintaining an input return loss of −14 dB.
Body worn wireless sensors for monitoring health information is a promising new application. In developing these sensors, a communication channel model is essential. However, there are currently few measurements or models describing propagation around the body. To address this problem, we have measured electromagnetic waves near the torso and derived… (More)
With the increasing interest in 60 GHz applications, low-cost CMOS circuit solutions emerge. The poor performance of CMOS devices at millimeter-wave frequencies complicates the design. In this work, we present two low-area VCOs covering the license-free 60 GHz band, using differential shielded (slow-wave) transmission line inductors. We discuss design and… (More)
The design of analog front-ends of digital telecommunica-tion transceivers requires simulations at the architectural level. The nonlinear nature of the analog front-end blocks is a complication for their modeling at the architectural level, especially when the nonlinear behavior is frequency dependent. This paper describes a method to derive a bottom up… (More)