Pierre Gentil

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Recent results on the characterization and applications of the SOI four-gate transistor (G<sup>4</sup>-FET) are reviewed. The advantages provided by four independent gates are discussed by distinguishing different operation modes: volume (depletion-all-around) and surface conduction. Several examples highlight the potential of the G<sup>4</sup>-FET for(More)
The G<sup>4</sup>-FET, a four-gate transistor compatible with standard silicon-on-insulator (SOI) CMOS technology, provides unique opportunities as a logic device. Combining both JFET- and MOSFET-like actions within one transistor body, the G<sup>4</sup>-FET offers two side (lateral) junction-based gates, a top MOS gate, and a MOS back gate that is(More)
The varying problems following arthrodesis of the lumbar spine with rods or plates (too much rigidity for the first and insufficient stability for the second) have led us to conceive another type of material, flexible but with enough stability, to favorise healing of bone graft, and decrease the induced pathology on adjacent levels. An experimental study of(More)
2014 The noise of nand p-channel S. O. S.-M. O. S. transistors has been measured at room temperature in the range of 1 kHz-1 MHz. Its behaviour has been related to the doping of the silicon film and to the effect of the bulk silicon layer bias. n-channel devices and p-channel ones, with a high enough doping concentration, exhibit 1/f noise which tends to(More)
Novel G<sup>4</sup>-FET based logic-circuits (adjustable-threshold inverter, real-time reconfigurable logic gates and DRAM cell) are experimentally demonstrated. The independent action of the four gates helps minimize the required transistor count per logic function while enhancing design flexibility
2014 The properties of a new génération of MOS transistors have been investigated in respect of their very small channel lengths, varying from 3 03BCm down to 0.3 03BCm. In particular we analysed their dégradation during electrical stress, the main paramèters of which were the bias intensity, the duration and the temperature. The static characteristics in(More)
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