Pierre Brosselard

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A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25degC-300degC range while the Si-PiN is tested up to 200degC due to the Si temperature limitation 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a(More)
This paper reports on the fabrication technology and packaging strategy for 300-V 5-A silicon carbide Schottky diodes with a wide temperature operation range capability (between −170 ◦C and 300 ◦C). These diodes have been designed for harsh environment space applications such as inner Solar System exploration probes. Different endurance tests have been(More)
4H-SiC Junction Barrier Schottky (JBS) diodes (1.2 and 3.5 kV) have been processed using the same technology with two different layouts. From 4 A and for the whole temperature range, the 3.5-kV diodes exhibit a bipolar conduction independent of the layout. However, the behavior of the 1.2-kV diodes depends on the design. At 500 V–300 ◦C, the leakage current(More)
This work presents the long-term stability of the SiC Schottky diodes able to operate in the temperature range -170°C/280°C, specially developed for the space mission BepiColombo. This mission consists in launching two satellites around the Mercury planet. After a travel of 6 years, the satellites will be orbiting around Mercury at least one year. When(More)
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