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Solution-processable metal oxide semiconductors for thin-film transistor applications.
In this review, we discuss the merits of solution-processed metal oxide semiconductors and consider their application in thin-film transistors for large-area electronics.
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High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer
Copper thiocyanate (CuSCN) is introduced as a hole-injection/hole-transport layer (HIL/HTL) for solution-processed organic light-emitting diodes (OLEDs). The OLED devices reported here with CuSCN asExpand
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Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature.
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at roomExpand
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Influence of side-chain regiochemistry on the transistor performance of high-mobility, all-donor polymers.
Three novel polythiophene isomers are reported whereby the only difference in structure relates to the regiochemistry of the solubilizing side chains on the backbone. This is demonstrated to have aExpand
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Electronic Properties of Copper(I) Thiocyanate (CuSCN)
With the emerging applications of copper(I) thiocyanate (CuSCN) as a transparent and solution-processable hole-transporting semiconductor in numerous opto/electronic devices, fundamental studies thatExpand
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p-channel thin-film transistors based on spray-coated Cu2O films
Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmedExpand
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Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin‐Film Transistors and Highly Efficient Organic and Organometal Halide
This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. WideExpand
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Metal-Halide Perovskite Transistors for Printed Electronics: Challenges and Opportunities.
Following the unprecedented rise in photovoltaic power conversion efficiencies during the past five years, metal-halide perovskites (MHPs) have emerged as a new and highly promising class ofExpand
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Study of the Hole Transport Processes in Solution‐Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)
Wide band gap hole-transporting semiconductor copper(I) thiocyanate (CuSCN) has recently shown promise both as a transparent p-type channel material for thin-film transistors (TFTs) and as aExpand
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