Philippe Hurat

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Lithography, etch and stress are dominant effects impacting the functionality and performance of designs at 65nm and below. This paper discusses pattern dependent variability caused by these effects and discusses a model-based approach to extracting this variability. A methodology to gauge the extent of this pattern dependent variability for standard cells(More)
An automated flow has been implemented to detect printability hotspots using a model-based solution, and to automatically fix these hotspots during final routing optimization. A widening manufacturing gap has led to a dramatic increase in design rules that are either too restrictive or do not guarantee a litho/etch hotspot-free design. Since the(More)
As the semiconductor industry enters the subwavelength era where silicon features are much smaller than the wavelength of the light used to create them, a number of “subwavelength” technologies such as Optical Proximity Correction (OPC) and PHase-Shifting Masks (PSM) have been introduced to produce integrated circuits (ICs) with acceptable(More)
To implement high-performance IC designs, a great deal of development effort goes toward providing optimization capabilities for popular cell-based methodologies. Cell-based methodologies rely on the availability of standard-cell libraries and design tools such as synthesis, verification and place-and-route tools. Although the industry is focusing mainly on(More)