Philippe Hurat

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Lithography, etch and stress are dominant effects impacting the functionality and performance of designs at 65nm and below. This paper discusses pattern dependent variability caused by these effects and discusses a model-based approach to extracting this variability. A methodology to gauge the extent of this pattern dependent variability for standard cells(More)
As the semiconductor industry enters the subwavelength era where silicon features are much smaller than the wavelength of the light used to create them, a number of “subwavelength” technologies such as Optical Proximity Correction (OPC) and PHase-Shifting Masks (PSM) have been introduced to produce integrated circuits (ICs) with acceptable(More)
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