Philippe Dollfus

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—Memristive nanodevices can feature a compact multi-level non-volatile memory function, but are prone to device variability. We propose a novel neural network-based computing paradigm, which exploits their specific physics, and which has virtual immunity to their variability. Memristive devices are used as synapses in a spiking neural network performing(More)
This work proposes two learning architectures based on memristive nanodevices. First, we present an unsupervised architecture that is capable of discerning characteristic features in unlabeled inputs. The memristive nanodevices are used as synapses and learn thanks to simple voltage pulses which implement a simplified "Spike Timing Dependent Plasticity"(More)
This work discusses the modeling of memristive devices, for architectures where they are used as synapses. It is shown that the most common models used in this context do not always accurately reflect the actual behavior of popular devices in pulse regime. We introduce a new behavioral model, intended towards the nanoarchitecture community. It fits the(More)
The locked-in syndrome (LIS) is a state of an upper motor neurone quadriplegia involving the cranial nerve pairs with usually a lateral gaze palsy, paralytic mutism, full consciousness and awareness by the patient of his environment. A historical presentation of the LIS is given as well as a short description of the clinicoanatomic lesion causing LIS. The(More)
—This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFETs. A careful description of electron–ion interaction suitable for the case of discrete impurities has been implemented in a three-dimensional particle Monte Carlo simu-lator. This transport model is applied to the investigation(More)
Direct tunneling gate currents of ultrathin gate oxide thickness metal oxide semiconductor field effect transistors ͑MOSFETs͒ are modeled in a two-step calculation procedure based on the treatment of physical microscopic data acquired during Monte Carlo device simulation. Gate currents are obtained by weighting the carrier perpendicular energy distribution(More)
This article presents a study of the giant piezoresistance effect in p-type silicon using full-band Monte Carlo simulation. This effect has been demonstrated experimentally in Si nanowires by He and Yang [1]. By introducing a law of variation of the surface potential according to the applied mechanical stress, we can reproduce this effect. The modulation of(More)
A new orthosis using the same principles as the tridigital pinch for forearm amputees is presented. The forward movement of the shoulders activates a cable which allows the two first fingers to grasp an object firmly against the thumb which is maintained in half opposition. This device can be particularly useful for low cervical lesions with no or weak(More)
We present a quantum transport simulation of graphene field-effect transistors based on the self consistent solution of 2D-Poisson solver and Dirac equation within the non-equilibrium Green's function formalism. The device operation of double gate 2D-graphene field effect transistors is investigated. The study emphasizes the band-to-band and Klein tunneling(More)