Philippe Boucaud

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We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection(More)
We have investigated the optical properties of tensile-strained germanium photonic wires. The photonic wires patterned by electron beam lithography (50 μm long, 1 μm wide and 500 nm thick) are obtained by growing a n-doped germanium film on a GaAs substrate. Tensile strain is transferred in the germanium layer using a Si₃N₄ stressor. Tensile strain around(More)
In this work we study, using experiments and theoretical modeling, the mechanical and optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the art complementary metal-oxide-semiconductor fabrication line, using fully qualified materials and methods. We show that these microstructures can be used as active lasing(More)
We compare the quality factor values of the whispering gallery modes of microdisks (μ-disks) incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor resonant modes on the whole spectrum, which allows us to identify the(More)
In a recent paper [1] we presented precise lattice QCD results of our Eu-ropean Twisted Mass Collaboration (ETMC). They were obtained by employing two mass-degenerate flavours of twisted mass fermions at maximal twist. In the present paper we give details on our simulations and the computation of physical observables. In particular, we discuss the problem(More)
We report on a comparison between the midinfrared absorption and the photocurrent response of n-doped InAs/GaAs self-assembled quantum dots. The absorption, resonant at 160 meV, is polarized along the z growth axis of the dots. The photocurrent is dominated by a z-polarized resonance around 220 meV ͑5.6 ␮m wavelength͒. A weaker component of the photocurrent(More)
We present the first direct evaluation of ∆I = 3/2 K → ππ matrix elements with the aim of determining all the low-energy constants at NLO in the chiral expansion. Our numerical investigation demonstrates that it is indeed possible to determine the K → ππ matrix elements directly for the masses and momenta used in the simulation with good precision. In this(More)
We propose a design for high quality factor two-dimensional (2D) photonic crystal cavities on silicon-on-insulator (SOI). A quality factor of up to 1.2×10(7) with a modal volume of 2.35(λ/n)(3) is simulated. A very high quality factor of 200,000 is experimentally demonstrated for a 2D cavity fabricated on SOI.