Philippe Blaise

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In this work, the impact of Ti electrodes on the electrical behaviour of HfO<inf>2</inf>-based RRAM devices is conclusively clarified. To this aim, devices with Pt, TiN and Ti electrodes have been fabricated (see Fig. 1). We first provide several experiments to clearly demonstrate that switching is driven by creation-disruption of a conductive filament.(More)
In this work, for the first time at our knowledge, the improvement of chalcogenide-based CBRAM performance and reliability by Sb doping of the GeS<sub>2</sub> electrolyte is presented. An original analysis, based on in-depth physico-chemical characterization, device electrical measurements, empirical model and first principle calculations, is shown. We(More)
In this paper, we present a new empirical model able to explain the main features of set and reset processes in Ag-GeS<sub>2</sub> Conductive Bridging Memories. The model is carefully validated on a wide number of experimental data, precisely designed for this scope. In particular, electrical tests were performed both in quasi static and in pulse modes on(More)
In this work, we use ab initio simulations to explore neutral and charged Frenkel pair (FP) formation inside HfO<sub>2</sub>. FP plays a crucial role in the conductive filament (CF) formation. We explore two possible mechanisms for the FP formation, namely electron injection and electron detrapping. The existence of one of the two mechanisms or both depends(More)
We study in detail the impact of alloying HfO<sub>2</sub> with Al (Hf<sub>1-x</sub>Al<sub>2x</sub>O<sub>2+x</sub>) on the device characteristics through materials characterization, electrical measurements and atomistic simulation. Indeed, movements of individual oxygen atoms inside the dielectric are at the heart of RRAM operations. Therefore, we performed(More)
In this paper, we have studied the charge trapping mechanisms of nitride-based non-volatile memories. The impact of different silicon-nitride (SiN) compositions (standard, std, and Si-rich) on the device characteristics has been investigated through material characterizations, electrical measurements, atomistic and electrical simulations. We found that the(More)
We study in detail the impact of alloying HfO<sub>2</sub> with Al (Hf<sub>1_x</sub>Al<sub>2</sub>xO<sub>2+x</sub>) on the oxide-based resistive random access memory (RRAM) (OxRRAM) thermal stability through material characterization, electrical measurements, and atomistic simulation. Indeed, migration of oxygen atoms inside the dielectric is at the heart of(More)
Tetragonal semimetallic phases are predicted for Hf(2)O(3) and Zr(2)O(3) using density functional theory. The structures belong to space group P4[over ¯]m2 and are more stable than their corundum counterparts. Many body corrections at first order confirm their semimetallic character. The carrier concentrations are very similar for both materials, and are(More)
In this work, we present an experimental and theoretical analysis of scaled (down to 10nm) Al<sub>2</sub>O<sub>3</sub>/CuTeGe based CBRAM. We focus on the understanding of the physical mechanisms responsible for the failure of high and low resistance states at high temperature. Using a numerical model combined with ab-initio calculations, we elucidate for(More)
In this paper the memory performances of the TiN/HfO<sub>2</sub>/Ti/TiN and TiN/Ta<sub>2</sub>O<sub>5</sub>/TaOx/TiN memory stacks are compared. First, the bipolar switching parameters and the effect of the compliance current on the memory window and endurance are investigated. Then, the endurance and data retention properties are compared at a given(More)