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This paper presents and compares different avalanche breakdown voltage estimation methods in 4H-SiC (silicon carbide) using finite element simulation results on Schottky diode. 4H-SiC avalanche breakdown voltage and depletion width estimated with Baliga’s equations have shown to be higher than other estimation techniques and simulation results, especially(More)
SiC Schottky Barrier Diodes (SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot and damping are shown to depend on the ambient temperature and the MOSFET switching rate (dIDS/dt). In this paper, it is shown experimentally and theoretically that dIDS/dt increases with temperature(More)
The temperature and dV/dt dependence of crosstalk has been analyzed for Si-IGBT and SiC-MOSFET power-modules. Due to smaller Miller capacitance resulting from a smaller die-area, the SiC-module exhibits smaller shoot-through currents compared with similarly rated Si-IGBTs in spite of switching with a higher dV/dt and a lower threshold-voltage. However, due(More)
Article history: Received 29 June 2016 Accepted 8 July 2016 Available online 18 September 2016 SiC is a wide bandgap semiconductor with better electrothermal properties than silicon, including higher temperature of operation, higher breakdown voltage, lower losses and the ability to switch at higher frequencies. However, the power cycling performance of SiC(More)
PiN diodes are known to contribute significantly to switching energy as a result of reverse recovery charge during turn-OFF. At high switching rates, the overlap between the high peak reserve recovery current and the high peak voltage overshoot contributes to significant switching energy. The peak reverse recovery current depends on the temperature and(More)
This paper describes the development and implementation of an analytical thermal model for fast and accurate thermal simulations of power device modules. A Fourier-based solution is used to solve the heat equation in two dimensions. The solution can describe the variation of temperature through the structure versus time. The thermal model is extremely fast(More)
The thermomechanical reliability of SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is critical. Press-pack assemblies are a trusted and reliable packaging solution that has traditionally been used for high power thyristorbased applications in FACTS/HVDC, although(More)