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Improvements in the power level of sources near 1550 nm and in the efficiency of waveguide frequency doublers enabled us to lock a frequency-doubled source directly to the 5S(1/2) ? 5D(5/2) two-photon transitions near 778 nm. We obtained a sufficiently powerful second-harmonic signal, exceeding 2 mW, by doubling an external-cavity diode laser that was(More)
SUMMARY CMOS poly-Si thin-film transistors (TFTs) were fabricated through crystallization and GILD processes by a novel selected area laser assisted (SALA) system. The system enables a local area irradiation of small beams of a pulsed solid-state laser of frequency tripled Nd:YAG. The novel TFT process eliminated 3 doping mask steps of the conventional(More)
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