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Mask Error Enhancement Factor (MEEF) plays an increasingly important role in the DFM and RET flow required to continue shrinking designs in the low-k1 lithography regime. The ability to model and minimize MEEF during lithography optimization and RET application is essential to obtain a usable process window (PW). In Inverse Lithography Technology (ILT),… (More)
2 current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification.
This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm<sub>2</sub>… (More)
What operation instruments interact with are human tissues and organs in virtual surgery. Because its impedance is nonlinear and unpredictable, the haptic interaction is difficult to be stable, especially when interacting with rigid tissues such as bone. To solve this difficult problem, this paper presents a sliding mode control algorithm based on Lyapunov… (More)
Operating room coordinators and personals frequently search for information on cases are about to end, to facilitate workflow and decision making, especially for large OR suits. Our study demonstrated the feasibility of using live temperature probe removal information as a leading indicator for early prediction of case end in real-time.
This paper reports on a 50W high efficiency wide band InGaP/GaAs high voltage HBT (HVHBT) two stage MMIC operating at 750MHz to 960MHz. It uses a high breakdown voltage, high ruggedness HBT process developed by TriQuint Semiconductor. The device employs a temperature compensation bias circuit to stabilize bias current change over temperature. The P-1dB of… (More)
Nonlinear HBT models are presented for 15W power amplifiers with superior back-off linearity. Each amplifier consists of 8 Building Blocks of 28V InGaP/GaAs HBT. The P1dB is 42dBm. The models are based on the AHBT model for the Building Block (1BB) reported previously. The model for the amplifier at 2.14GHz is scaled from the AHBT model for 1BB whereas the… (More)
An accurate non-linear large signal model is developed for GaAs E-pHEMT by revising the Verilog-A source code of the Angelov (Chalmers) model. The model is scalable and the scaling is fully verified by DC, thermal, capacitances, and S-parameters under multiple bias conditions. Excellent agreement between the simulation and measurement has been achieved for… (More)