Peter J. Matsuo

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The pattern transfer of SiO2 hard masks into polytetrafluoroethylene, parylene-N, and poly~arylene ether! ~PAE-2! has been characterized in an inductively coupled plasma source. Selected results obtained with blanket parylene-AF4 films are included in this work. These dielectrics offer a relatively low dielectric constant ~k;2–3! and are candidate materials(More)
The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that the etch rates of Si3N4 and SiO2 are not limited by the amount of fluorine arriving on the surface only. Adding(More)
A highly selective dry etching process for the removal of silicon nitride ~Si3N4) layers from silicon and silicon dioxide (SiO2) is described and its mechanism examined. This new process employs a remote O2 /N2 discharge with much smaller flows of CF4 or NF3 as a fluorine source as compared to conventional Si3N4 removal processes. Etch rates of Si3N4 of(More)
This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a(More)
The etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) in the afterglow of NF3 and NF3 /O2 microwave discharges has been characterized. The etch rates of both materials increase approximately linearly with the flow of NF3 due to the increased availability of F atoms. The etch rate of Si3N4 is enhanced significantly upon O2 injection into the NF3(More)
The cleaning of Al, TiN, and Cu blanket samples was investigated in a high density inductively coupled plasma reactor, and compared with results for silicon. After simulating the dielectric overetch exposure of these substrates to a CHF3 discharge, an in situ O2 plasma clean and subsequent Ar premetal sputter clean were performed and evaluated using(More)
By comparing the etching characteristics of silicon and silicon nitride in CF4 /O2 /N2 microwave downstream plasmas we demonstrate clearly how low concentrations of energetic species can play a dominant role in remote plasma processing: Injection of 5% N2 to a CF4 /O2 plasma increases the silicon nitride etch rate by a factor of 7, while not significantly(More)
The etching of silicon in remote microwave discharges fed with NF3 /O2 has been investigated. In situ ellipsometry and x-ray photoelectron spectroscopy ~XPS! were used to monitor surface effects, while mass spectrometry was used to monitor the gas phase dynamics. Varying the microwave power from 600 to 1400 W has little effect, due to the near complete(More)
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