Peter Gaiduk

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A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and(More)
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and(More)
First evidence for discontinuous ion tracks in singlecrystalline Si0.5Ge0.5 alloy layers has recently been found using 1.3 GeV U projectiles of electronic stopping power Se = 33.8 keV/nm [1]. Here, we report observations concerning track formation and the velocity effect [2] in SiGe alloys. Near the Se threshold for track formation, tracks are discontinuous(More)
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