Peter Ersland

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Hot electron reliability experiments were conducted on four GaAs FET processes. Observed device degradation was similar to the results reported by other authors (e.g. decrease of the open channel current, and a rightward shift and compression of the transconductance curve). While the degradation modes were the same for all four processes, the degradation(More)
We report the results of DC biased life tests performed on gallium arsenide pseudomorphic high electron mobility transistor (GaAs pHEMT) switches under elevated temperature and humidity conditions. The goal of this work was to determine whether the acceleration factors typically reported for silicon technologies are also appropriate for GaAs technologies.(More)
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