Peter A. Losee

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Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different(More)
RECENT progress in wide bandgap power (WBG) switches shows great potential. Silicon carbide (SiC) is a promising material for power devices with breakdown voltages of several hundred volts up to 10 kV. SiC Schottky power diodes have achieved widespread commercial acceptance. Recently, much progress has been made on active SiC switches, including JFETs,(More)
A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175°C. There are 12 GE SiC MOSFET chips per switch and the MOSFET's body diode is utilized as the freewheeling diode. The module's typical on-resistance is 3.8mOhms at 25°C and 5.8mOhms at(More)
Silicon carbide (SiC) MOSFET power devices are expected to replace silicon IGBTs in power electronics applications requiring higher efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the development of high efficiency SiC power MOSFETs, power modules and switching converters at GE. The prototype 30A,(More)
High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using 6 &#x00D7; 6 mm<sup>2</sup> SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS&#x2122; package and used to perform switching tests on the diodes. The(More)
A 3000V, 25A asymmetrical Silicon Carbide (SiC) Thyristor for pulse power applications is described here. It was fabricated on ultra low micropipe density 4H-SiC wafers. The device design, fabrication, wafer testing, packaging, static and dynamic characteristics are presented. The devices' chip area is 4mm&#x00D7;4mm, the yield after screening for blocking(More)
This paper illustrates several issues that a user of high voltage PiN diodes may encounter in actual application conditions. It shows that high-voltage power diodes require specifiable on-time prior to entering their reverse recovery phase and offers 1D device simulations and measurements taken on several actual high power diodes to illustrate and explain(More)
This paper presents the latest 1.2kV-2.2kV SiC MOSFETs designed to maximize SiC device benefits for high-power, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm &#x00D7; 4.5mm were fabricated, exhibiting room temperature on-resistances of 34mOhm, 39mOhm and 41mOhm, respectively. The ability to safely(More)
This paper investigates the behavior of selected Si-PiN and SiC (BD-MOS &amp; SBD) FWD in multichip power modules during current surge event conditions. Surges can occur in high power converters used for motor drives and grid connected systems. A novel testbench and testing procedure is introduced which allows fairly rapid type-test characterization of(More)
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