Peter A Dowben

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The structure and local structural distortions, through the polarization manipulation, of crystalline films of ferroelectric vinylidene fluoride (70%) with trifluoroethylene (30%) [P(VDF-TrFE)] copolymer on graphite were studied by scanning tunneling microscopy (STM). A quasispiral twist in CuC bonds with rotations about the polymer chain axis was observed(More)
We find that Gd2O3 thin films strongly favor a ( 402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the(More)
Pairwise cobalt doping of boron carbides with cobaltocene" (2007). We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition ͑PECVD͒ grown " C 2 B 10 H x " semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown(More)
Auger electrm specm and Auger yields of free argon clusm in the I\I('Zp) excitation regime are reported. The Auger yield specua show chmcmistic changes as a function of cluster size. The results indicafe that the Auger yield signal originates primarily i%om the surface of the clusm. The results are compared to bulk-sensitive experimental techniques, such as(More)
From magnetic circular dichroism measurements of the Heusler alloy NiMnSb, in combination with other techniques, we show that a dramatic increase in the Mn and Ni moments occurs below a ‘‘crossover’’ transition temperature of about 80–100 K. This phase transition is well below the Curie temperature of NiMnSb ~;730 K!. While the spin polarization near the(More)
The introduction metallocenes, in particular ferrocene (Fe(η-C5H5)2), cobaltocene (Co(η-C5H5)2), and nickelocene (Ni(η-C5H5)2), together with the carborane source molecule closo-1,2-dicarbadodecaborane, during plasma enhanced chemical vapor deposition, will result in the transition metal doping of semiconducting boron carbides. Here we report using(More)