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Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate

• Natsuki Hayasaka, Tetsuo Nishiyama, +7 authors Kazuhiko Shimomura
• 2017 5th International Workshop on Low…
• 2017

Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE… (More)

1.5 μm laser diode on InP/Si substrate by epitaxial growth using direct bonding method

• Periyanayagam Gandhi Kallarasan, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Kazuhiko Shimomura
• 2017 Conference on Lasers and Electro-Optics…
• 2017

We have demonstrated for the first time 1.5 μm GaInAsP laser on silicon substrate using direct wafer bonding and MOVPE growth. The energy bandgap of bulk crystalline silicon is always a… (More)

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