Pengzhen An

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High electric field stress (HEFS) and annealing effects on irradiated (by <sup>60</sup>Co <inline-formula> <tex-math notation="LaTeX">$\gamma$ </tex-math></inline-formula>-ray) vertical double-diffused MOSFETs (VDMOSFETs) are investigated. The behaviors of the oxide-trapped charges and interface traps during the stress are measured by using a simplified(More)
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