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- Yuchao Yang, Peng Gao, Siddharth Gaba, Ting Chang, Xiaoqing Pan, Wei Lu
- Nature communications
- 2012

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth… (More)

- Yuchao Yang, Peng Gao, +6 authors Wei D. Lu
- Nature communications
- 2014

Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate… (More)

A supersymmetric vacuum has to obey a set of constraints on fluxes as well as first order differential equations defined by the G-structures of the internal manifold. We solve these equations for type IIB supergravity with SU(3) structures. The 6-dimensional internal manifold has to be complex, the axion/dilaton is in general non-holomorphic and a… (More)

- Christopher T Nelson, Peng Gao, +15 authors Xiaoqing Pan
- Science
- 2011

The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric… (More)

- Peng Gao, Zhenzhong Wang, +5 authors E. G. Wang
- Micron
- 2010

Oxide materials with resistance hysteresis are very promising for next generation memory devices. However, the microscopic dynamic process of the resistance change is still elusive. Here, we use in situ transmission electron microscopy method to study the role of oxygen vacancies for the resistance switching effect in cerium oxides. The structure change… (More)

- Peng Gao, Christopher T Nelson, +7 authors Xiaoqing Pan
- Nature communications
- 2011

Ferroelectric materials are characterized by a spontaneous polarization, which can be reoriented with an applied electric field. The switching between polarized domains is mediated by nanoscale defects. Understanding the role of defects in ferroelectric switching is critical for practical applications such as non-volatile memories. This is especially the… (More)

- Peng Gao, Heng-Jui Liu, +7 authors Yuichi Ikuhara
- Nature communications
- 2016

At the ferroelectric surface, the broken translational symmetry induced bound charge should significantly alter the local atomic configurations. Experimentally revealing the atomic structure of ferroelectric surface, however, is very challenging due to the strong spatial variety between nano-sized domains, and strong interactions between the polarization… (More)

- Peng Gao
- 2002

where Pn,0(x) denotes the limit of Pn,r (x) as r → 0+ and where qi > 0, 1≤ i≤n, are positive real numbers with ∑n i=1qi = 1 and x = (x1,x2, . . . ,xn). In this note, we let q =minqi and always assume n≥ 2 and 0≤ x1 <x2 < ···<xn. We define An(x) = Pn,1(x), Gn(x) = Pn,0(x), and Hn(x) = Pn,−1(x) and we will write Pn,r for Pn,r (x), An for An(x), and similarly… (More)

- Linze Li, Peng Gao, +7 authors Xiaoqing Pan
- Nano letters
- 2013

Charged domain walls (CDWs) are of significant scientific and technological importance as they have been shown to play a critical role in controlling the switching mechanism and electric, photoelectric, and piezoelectric properties of ferroelectric materials. The atomic scale structure and properties of CDWs, which are critical for understanding the… (More)

- Peng Gao, Jason Britson, +13 authors Xiaoqing Pan
- Nature communications
- 2014

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the… (More)