Peiyuan Wang

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Spin-transfer torque random access memory (STT-RAM) has recently gained increased attentions from circuit design and architecture societies. Although STT-RAM offers a good combination of small cell size, nanosecond access time and non-volatility for embedded memory applications, the reliability of STT-RAM is severely impacted by device variations and(More)
Novel nonvolatile memory (NVM) technologies are gaining significant attention from semiconductor industry in the competition of universal memory development. However, as nanoscale devices, these emerging NVMs suffer from the intrinsic technology challenges such as large process variations. The importance of effective statistical approaches for yield(More)
The STT-RAM (Spin-Transfer Torque Magnetic RAM) technology is a promising candidate for cache memory because of its high density, low standy-power, and non-volatility. As technology scales, especially under 40nm technology node, the read disturbance becomes severe since the read current approaches closely to the switching current. In addition, the read(More)
OBJECTIVE As one of the most popular and extensively studied paradigms of brain-computer interfaces (BCIs), event-related potential-based BCIs (ERP-BCIs) are usually built and tested in ideal laboratory settings in most existing studies, with subjects concentrating on stimuli and intentionally avoiding possible distractors. This study is aimed at examining(More)
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