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GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of(More)
Climatological high resolution coupled climate model simulations for the maritime continent have been carried out using the regional climate model (Reg-CM) version 3 and the finite volume coastal ocean model (FVCOM) specifically designed to resolve regions characterized by complex geometry and bathymetry. The RegCM3 boundary forcing is provided by the(More)
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