Peiqiang Xu

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GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of(More)
—We analyzed the microwave emission from a rough soil surface with exponential correlation by characterizing its dependences of polarization, look angle, and frequency. Using the same set of physical surface parameters of rms height and correlation lengths, results are obtained for a wide range of frequencies at 1.4 GHz, 5 GHz, 10 GHz, 18 GHz, and 36.5 GHz.(More)
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