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Both relaxor ferroelectric and antiferroelectric materials can individually demonstrate large electrocaloric effects (ECE). However, in order to further enhance the ECE it is crucial to find a material system, which can exhibit simultaneously both relaxor ferroelectric and antiferroelectric properties, or easily convert from one into another in terms of the(More)
Multiferroic magnetoelectric (ME) composites exhibit sizable ME coupling at room temperature, promising applications in a wide range of novel devices. For high density integrated devices, it is indispensable to achieve a well-ordered nanostructured array with reasonable ME coupling. For this purpose, we explored the well-ordered array of isolated epitaxial(More)
Efficient and cost-competitive fabrication of high-quality ferroelectric and multiferroic nanostructures is of general interest. In this work, a top-down nano-patterning technique is developed by the Ar(+) ion beam etching in combination with the sacrificed ultrathin anodic alumina (AAO) mask. This technique is demonstrated by preparation of the epitaxial(More)
The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high(More)
Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and(More)
Negative differential resistance (NDR) has been extensively investigated for its wide device applications. However, a major barrier ahead is the low reliability. To address the reliability issues, we consider ferroelectrics and propose an alternative mechanism for realizing the NDR with deterministic current peak positions, in which the NDR results from the(More)
We report a facile and cost-competitive nanopatterning route, using Ar ion beam etching through a monolayer polystyrene sphere (PS) array placed on a ferroelectric epitaxial thin film, to fabricate ordered ferroelectric nanodot arrays. Using this method, well-ordered BiFeO3 epitaxial nanodots, with tunable sizes from ∼100 to ∼900 nm in diameter, have been(More)
We report the temperature and gate-voltage-dependent electrical properties of lead-zirconate-titanate-gated MoS2 field-effect transistors (MoS2-PZT FETs) within a temperature range of 300 to 380 K. The MoS2 transistors with PZT gating exhibit large reproducible clockwise hysteresis, which is induced by the dynamic charge-trapping/de-trapping process of(More)
Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its potential in developing optoelectronic devices such as solar cell and electric-optical sensors. It is important for actual applications to realize a controllable photovoltaic process in ferroelectric-based materials. In this work, we prepared well-ordered(More)
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