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Cross-validating new methods for recording neural activity is necessary to accurately interpret and compare the signals they measure. Here we describe a procedure for precisely aligning two probes for in vivo "paired-recordings" such that the spiking activity of a single neuron is monitored with both a dense extracellular silicon polytrode and a(More)
We report the effect of a disperse carbon interlayer between the n-a-Si:H layer and an aluminium zinc oxide (AZO) back contact on the performance of amorphous silicon solar cells. Carbon was incorporated to the AZO film as revealed by x-ray photoelectron spectroscopy and energy-dispersive x-ray analysis. Solar cells fabricated on glass substrates using AZO(More)
This paper addresses a modeling and simulation methodology for analog circuit design with amorphous-GIZO thin-film transistors (TFTs). To reach an effective circuit design flow, with commercially available tools, a TFT model has been first developed with an artificial neural network (ANN). Multilayer perceptron with backpropagation algorithm has been(More)
Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm 2 /(V·s) and a threshold voltage of 12.2 V. The SnO TFT(More)
Cross-validating new methods for recording neural activity is necessary to accurately interpret and compare the signals they measure. Here we describe a procedure for precisely aligning two probes for in vivo " paired-recordings " such that the spiking activity of a single neuron is monitored with both a dense extracellular silicon polytrode and a(More)
We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray(More)
This paper presents the characterization of fundamental analog and digital circuits with a-IGZO TFTs from measurements performed at normal ambient. The fundamental blocks considered in this work include digital logic gates, a low-power single stage high-gain amplifier with capcacitive bootstrapping and a level shifter/buffer. These circuits are important(More)