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We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon(More)
We present the first measurement results from hybrid AlGaN-on-Si-based Extreme Ultraviolet (EUV) imagers with 10 µm pixel-to-pixel pitch. The 256x256 backside illuminated Focal Plane Arrays (FPAs) were hybridized to dedicated Si-based CMOS Readouts (ROICs). The AlGaN active layer with 40% Al concentration provides an intrinsic rejection of wavelengths(More)
This article presents an embedded signal processing subsystem constituting a part of a whole structural health monitoring system (SHM). Typical SHM system is responsible for elastic wave generation and sensing, signal acquisition, and signal processing. Signal processing subsystem was designed with the aim of localizing damage utilizing elastic wave(More)
This paper presents experimental results for wave propagation in an anisotropic multilayered structure with linearly varying cross section. Knowing the dispersion and wave propagation properties in such a structure is of great importance for non-destructive material testing and structural health monitoring applications for accurate damage detection and(More)
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