Paul W Abramowitz

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Phenomenological time-dependent dielectric breakdown (TDDB) and bias-temperature instability (BTI) models are demonstrated to enable reasonably accurate reliability projections for several generations of silicon oxynitride-based transistors and circuits with EOT down to /spl sim/1.3 nm. Furthermore, while reliability and performance can be traded-off by(More)
PURPOSE The background and methods of an ongoing study to determine the effects of hospital pharmacists' enhanced communication with patients and their community providers are described. SUMMARY The Iowa Continuity of Care study is a randomized, prospective trial enrolling 1000 patients with selected medical conditions admitted to one large Midwest(More)
We report for the first time electrical characterization of HfO 2 p-and n-MOSFETs with CVD TiN and PVD TaSiN gates respectively. Their performance is compared to PVD TiN-gated HfO 2 and SiO 2 n-and p-MOSFETs. To understand the issues with metal gates on high K gate dielectrics, PVD TiN MOSFETs were extensively characterized. At 10nA/µm leakage, 0.375mA/µm(More)
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