Learn More
Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium " Stubborn " triaminotrinitrobenzene: Unusually high chemical stability of a molecular solid to 150 GPa Stress migration risk on electromigration reliability in advanced narrow line copper interconnects Stress migration model for Cu interconnect reliability(More)
Chip-packaging interaction is becoming a critical reliability issue for Cu/low k chips during package assembly. With the traditional TEOS interlevel dielectric being replaced by much weaker low k dielectrics, packaging induced interfacial delamination in low k interconnects has been widely observed, raising serious reliability concerns for Cu/low k chips.(More)
— The paper describes a 4-MHz temperature compensated reference oscillator based on a capacitive silicon micro-mechanical resonator. The design of the resonator has been optimized to offer large quality factors (22000), while maintaining tunability in excess of 3000ppm for fine tuning and temperature compensation. Oscillations are sustained with a CMOS(More)
In most cases authors are permitted to post their version of the article (e.g. in Word or Tex form) to their personal website or institutional repository. Authors requiring further information regarding Elsevier's archiving and manuscript policies are encouraged to visit: a b s t r a c t A comprehensive kinetic analysis was established to investigate the(More)
Mechanism for resistive switching in an oxide-based electrochemical metallization memory Appl. The role of eddy currents and nanoparticle size on AC magnetic field–induced reflow in solder/magnetic nanocomposites J. Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique Appl.(More)
—This paper investigates two key aspects of thermomechanical reliability of through-silicon vias (TSV) in 3D interconnects. One is the piezoresistivity effect induced by the near surface stresses on the charge mobility for p-and n-channel MOSFET devices. The other problem concerns the interfacial delamination induced by thermal stresses including the pop-up(More)
A kinetic analysis was formulated for electromigration enhanced intermetallic evolution of a Cu–Sn diffusion couple in the Sn-based Pb-free solder joints with Cu under bump metallurgy. The simulated diffusion couple comprised the two terminal phases, Cu and Sn, as well as the two intermetallic phases, Cu 3 Sn and Cu 6 Sn 5 , formed between them. The(More)
Recent studies on Cu interconnects have shown that interface diffusion between Cu and the cap layer dominates mass transport for electromigration. The kinetics of mass transport by interface diffusion strongly depends on the material and processing of the cap layer. In this series of two papers, we report in Part I the interface and grain-boundary mass(More)