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  • Massimo V. Fischetti, Zhibin Ren, Paul M. Solomon, Min Yang, K. Rim
  • Physics
  • 2003 (First Publication: 15 July 2003)
  • A six-band k⋅p model has been used to study the mobility of holes in Si inversion layers for different crystal orientations, for both compressive or tensile strain applied to the channel, and for aContinue Reading
  • Thomas N. Theis, Paul M. Solomon
  • Engineering, Computer Science
  • Proceedings of the IEEE
  • 2010 (First Publication: 1 December 2010)
  • Reduced power dissipation relative to the field-effect transistor (FET) is a key attribute that should be possessed by any device that has a chance of supplanting the FET as the ubiquitous buildingContinue Reading