Patrizio Graziosi

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Information and communication technology (ICT) is now calling for solutions enabling lower power consumption, further miniaturization, and multifunctionality requiring the development of new device concepts and new materials. [ 1 ] One of the most fertile approaches to meet such demands is spintronics, which is now facing the challenge of evolving from the(More)
We report on efficient spin polarized injection and transport in long ͑10 2 nm͒ channels of Alq 3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq 3 , while the top-electrode geometry consists of an insulating tunnel barrier placed between the " soft " organic semiconductor(More)
The outgrowth formation in inorganic thin films is a dramatic problem that has limited the technological impact of many techniques and materials. Outgrowths are often themselves part of the films, but are detrimental for vertical junctions since they cause short-circuits or work as defects, compromising the reproducibility and in some cases the operation of(More)
Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unknown surface features consisting of small non-stoichiometric islands. Based upon this evidence, a new mechanism for the growth of these complex(More)
b) c) Top Electrode Bottom Electrode Top domains Bottom domains Middle Domain a) Co LSMO Co LSMO Low Resistance High resistance The Fig.4a shows the spin valve presented previously in Fig.1 before any higher voltage was applied-this corresponds to the lowest resistance state and a SVMR of 22%. Next, we apply a voltage bias of-1.5 V and the device resistance(More)
We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust(More)
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