Patrick Schuh

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Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology.(More)
This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set and of an ultra-wideband high power amplifier (HPA) transmit module for multi-functional next-generation active electronically scanned antenna radar/electronic warfare/communication applications targeting the frequency range from 6 to 18 GHz. The reported(More)
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits on the bases of novel AlGaN/GaN HEMT structures. Both, driver and high power amplifiers are designed for X-band frequencies. The monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a(More)
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active(More)
In this contribution, design and characterization of two broadband GaN MMIC switches are presented. Being designed for a bandwidth of 5 to 18 GHz, both switches reach a minimum insertion loss of 0.7 dB and a maximum of 1.3 dB resp. 1.4 dB. Isolation values of more than 21 dB resp. 27 dB are realized. Loss compression is less than 1 dB at 43 dBm, resp. 0.5(More)
This paper presents the design and measurement results of robust wideband low noise amplifiers (LNAs) for multifunctional next-generation active electronically scanned antenna applications targeting the frequency range from 5 to 18GHz. The presented LNAs offer different bond wire options to face a trade-off between RF performance, power handling capability,(More)
PEP-II and BaBar have just finished run 7, the last run of the SLAC B-factory. PEP-II was one of the few highcurrent e+ecolliding accelerators and holds the present world record for stored electrons and stored positrons. It has stored 2.07 A of electrons, nearly 3 times the design current of 0.75 A and it has stored 3.21 A of positrons, 1.5 times more than(More)
This paper presents the design of an optimized test and application setup for surface acoustic wave (SAW) RF filters. These structures have been investigated, including the test devices, by simulation techniques based on full-wave methods and common SAW simulation methods. In this paper, the simulation technique will be explained in detail, focusing on the(More)
From 2005 to 2009, the European Defense Agency (EDA) supported the KORRIGAN project, aimed at establishing a European supply chain for the manufacturing of GaN HEMT devices and MMICs. This paper describes one follow-up programme, called MAGNUS (“GaN with UMS GH25 process”) fully dedicated to MMICs and module design using the quarter micron GaN(More)
Wideband amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband amplifier MMICs operate up to a(More)
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