Patricia M. Mooney

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III-V semiconductor materials are under active investigation for use as optical detectors in the mid infrared wavelength region from 3 to 12 µm. In this paper we summarize recent progress on the development of III-V materials for this application based on the material InAsSb. We first present the results of investigations in the use of strained(More)
Columnar microstructure in step-graded Si(1-x)Ge(x)/Si(001) structures with low threading dislocation densities has been determined using high angular resolution (approximately 0.005 degrees ) x-ray microdiffraction. X-ray rocking curves of a 3-microm-thick strain-relaxed Si(0.83)Ge(0.17) film show many sharp peaks and can be simulated with a model having a(More)
aDepartment of Materials Engineering, University of British Columbia, Vancouver, BC V6T1Z4, Canada bPhysics Department, Simon Fraser University, Burnaby, BC V5A 1S6, Canada cAdvanced Imaging and Characterization Lab, King Abdullah University of Science & Technology (KAUST), Thuwal, Makkah 23599, Saudi Arabia dDivision of Physical Sciences and Engineering,(More)
Epitaxially grown lattice mismatched semiconductor structures are increasingly important for microelectronic and optoelectronic applications. Recently, a great deal of research has been done on strain relaxation mechanisms in lattice mismatched epitaxial films. Here we describe two high resolution x-ray diffraction experiments performed to study strain(More)
The high flux and density of x-rays produced at synchrotrons provide the microelectronics industry with a powerful probe of the structure and behavior of a wide array of solid materials that are being developed for use in devices of the future. They also are of great use in determining why currently-used materials and processes sometimes fail. This paper(More)
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