Pascal Gouraud

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Bertrand Le Gratiet * , Pascal Gouraud , Enrique Aparicio , Laurene Babaud, Karen Dabertrand, Mathieu Touchet, Stephanie Kremer, Catherine Chaton, Franck Foussadier, Frank Sundermann Jean Massin, Jean-Damien Chapon, Maxime Gatefait, Blandine Minghetti, Jean de-Caunes, Daniel Boutin a STMicroelectronics, 850 rue Jean Monnet, F 38926 Crolles Cedex, France c(More)
Thin film devices (FDSOI) are among the most promising candidates for next device generations due to their better immunity to short channel effects (SCE). In addition, the introduction of high-k and metal gate has greatly improved the MOSFETs performance by reducing the electrical oxide thickness (CET) and gate leakage current. However, if midgap metal gate(More)
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