Partice Gamand

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This paper carries out experimental results concerning distributed amplifier on alumina substrate. This amplifier, using 8 FETs of 0.5 ¿m gate length fabricated at LEP exhibits 6 ± 1 dB gain over the frequency range 0.1 to 25 GHz. In this paper, we describe the design of such an amplifier and we discuss possibilities for further improvements in distributed(More)
This paper describes 3 types of free running oscillators that have been designed and fabricated using a 0.5 micron HEMT process. Output powers, including the waveguide transition, of -3 to -5 dBm have been measured in Q band. One type of oscillator, exhibits an external Q greater than 2700 at 52 GHz. The design approaches and the results, on phase noise in(More)
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