Parsian Katal Mohseni

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We report on transport measurements of an InAs nanowire coupled to niobium nitride leads at high magnetic fields. We observe a zero-bias anomaly (ZBA) in the differential conductance of the nanowire for certain ranges of magnetic field and chemical potential. The ZBA can oscillate in width with either the magnetic field or chemical potential; it can even(More)
The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs NWs on graphene results in spontaneous phase separation starting from the beginning of growth, yielding a(More)
We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-in junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the(More)
Dr. P. K. Mohseni, Dr. A. Behnam, Dr. J. D. Wood, X. Zhao, N. C. Wang, Prof. J. W. Lyding, Prof. E. Pop, Prof. X. Li Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign Urbana , Illinois 61801 , USA E-mail: K. J. Yu, Prof. A. Rockett, Prof. J. A. Rogers Department of Materials Science and(More)
Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric(More)
III–V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal budget are minimized by regrowth using metalorganic chemical vapor deposition instead of implantation. The fabricated short channel (Lg = 80 nm) GaAs GAA NWFETs with extremely scaled NW width (WNW = 9 nm)(More)
Metal-assisted chemical etching (MacEtch or MaCE) is a robust and versatile process that has been adopted to overcome the limits of conventional semiconductor wet and dry etching technologies.[1–4] The advantage of producing high aspect ratio microand nano-structures with this simple and low-cost process has attracted attention for improving not only the(More)
Metallic films with subwavelength apertures, integrated into a semiconductor by metal-assisted chemical etch (MacEtch), demonstrate enhanced transmission when compared to bare semiconductor surfaces. The resulting "buried" metallic structures are characterized spectroscopically and modeled using rigorous coupled wave analysis. These composite materials(More)
In this work, we investigate the transport processes governing the metal-assisted chemical etching (MacEtch) of silicon (Si). We show that in the oxidation of Si during the MacEtch process, the transport of the hole charges can be accomplished by the diffusion of metal ions. The oxidation of Si is subsequently governed by a redox reaction between the ions(More)