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We report on transport measurements of an InAs nanowire coupled to niobium nitride leads at high magnetic fields. We observe a zero-bias anomaly (ZBA) in the differential conductance of the nanowire for certain ranges of magnetic field and chemical potential. The ZBA can oscillate in width with either the magnetic field or chemical potential; it can even(More)
The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via the vapor-liquid-solid (VLS) mechanism has redefined the long-standing symbolic image of VLS NW growth. The in-plane geometry and self-aligned nature make these planar NWs completely compatible with large scale manufacturing of NW-based integrated nanoelectronics.(More)
An additional benefi t of the use of NW arrays for PVs is the inherent cost-saving potential associated with the reduced volume of the energy conversion medium, leveraged by the ability to grow high quality III-V crystals on foreign substrates. The use of foreign (non-III-V compound semiconductor) sub-strates was previously shown to enhance device(More)
— III–V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally demonstrated for the first time. Source/drain resistance and thermal budget are minimized by regrowth using metalorganic chemical vapor deposition instead of implantation. The fabricated short channel (L g = 80 nm) GaAs GAA NWFETs with extremely scaled NW width (W NW = 9(More)
We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-in junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the(More)
The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs NWs on graphene results in spontaneous phase separation starting from the beginning of growth, yielding a(More)
One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1-y nanowire array across an entire 2 in. Si wafer with unprecedented(More)
Wafer-scale defect-free planar III-V nanowire (NW) arrays with ∼100% yield and precisely defined positions are realized via a patterned vapor-liquid-solid (VLS) growth method. Long and uniform planar GaAs NWs were assembled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF(More)
Ultrathin InAs nanowires (NWs) can enable true one-dimensional electronics. We report a growth phenomenon where a bimodal size distribution (∼ α nm and ∼ 5 nm in diameter) of InAs NWs can be achieved from gold (Au) nanoparticles of a single size, α (α = 50-250 nm). We determine that ultrathin InAs NW growth is seeded by ultra-small Au nanoparticles shed(More)