Paolo Srinivasan

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—The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n-and p-channel MOSFETs with high-κ gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f(More)
The nitridation effects on low-frequency ͑1/f͒ noise in metallorganic chemical vapor deposited HfO 2 n-and p-metal oxide semiconductor field effect transistors ͑MOSFETs͒ are reported. Devices with a postdeposition anneal ͑PDA͒, performed after HfO 2 deposition, in a N 2 or NH 3 ambient were investigated. A significant variation in noise was observed when(More)
The defects related to the gate–dielectric in high-j-MOSFETs are studied using the 1/f noise technique. Three different types of gate electrodes were used for this purpose – poly-Si, metal (TiN/TaN) and fully Ni Silicided (FUSI) electrodes with Hf-based oxides as the gate dielectric layer. All the three types of devices show a specific behavior near the(More)
Flicker noise is used as a diagnostic tool to analyze the degradation mechanism before and after BTI in thin and thick gate oxide FinFETs. Although nFETs show lower BTI than pFETs for thick gate oxides, comparable BTI degradation is noticed between thin gate oxide nFETs and pFETs. Analyses of noise spectra reveal that: the degradation of oxide occurs closer(More)
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