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Resistive Random Access Memory (ReRAM) has several advantages over current NAND Flash technology, highlighting orders of magnitude lower access latency and higher endurance. Recently proposed 3D vertical cross-point ReRAM (3D-VRAM) architecture is an encouraging development in ReRAM's evolution as a cost-competitive solution, and thus attracts a lot of(More)
The cross-point array architecture with resistive synaptic devices has been proposed for on-chip implementation of weighted sum and weight update in the training process of learning algorithms. However, the non-ideal properties of the synaptic devices available today, such as the nonlinearity in weight update, limited ON/OFF range and device variations, can(More)