Pai-Yu Chen

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Resistive Random Access Memory (ReRAM) has several advantages over current NAND Flash technology, highlighting orders of magnitude lower access latency and higher endurance. Recently proposed 3D vertical cross-point ReRAM (3D-VRAM) architecture is an encouraging development in ReRAM's evolution as a cost-competitive solution, and thus attracts a lot of(More)
Inherent stochastic physical mechanisms in emerging nonvolatile memories (NVMs), such as resistive random-access-memory (RRAM), have recently been explored for hardware security applications. Unlike the conventional silicon Physical Unclonable Functions (PUFs) that are solely based on manufacturing process variation, RRAM has some intrinsic randomness in(More)