Pablo Royer

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The expected large variations of electrical characteristics of sub-22 nm devices represents a limitation on future electronic circuits. This is particularly relevant on RAM memories that have to ensure both read stability and write ability of all the cells. In this paper we present a 6T-SRAM designed with 14nm FinFETs that makes use of the negative bit-line(More)
  • Susanne C Kehr, Pu Yu, Yongmin M Liu, Markus Parzefall, Asif I Khan, Rainer Jacob +150 others
  • 2011
Superlenses create sub-diffraction-limit images by reconstructing the evanescent fields arising from an object. We study the lateral, vertical, and spectral field distribution of three different perovskite-based superlenses by means of scattering-type near-field microscopy. Sub-diffraction-limit resolution is observed for all samples with an image contrast(More)
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