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A method to make two types of hinges which bend toward opposite directions from the same epitaxial layers using the micro-origami technique is proposed and successfully applied to make standing micro-stages on a GaAs substrate. This method opens a path to fabricate more complex three-dimensional self-positioned micro-machined structures.
An experimental and numerical investigation of the effect of material anisotropy on the self-positioning of epitaxial nanostructures has been performed. The self-positioning occurs due to a lattice mismatch between two epitaxial material layers (GaAs and In(0.2)Ga(0.8)As) of a hinge. Both materials have cubic crystal symmetry and possess anisotropic… (More)
A light-emitting diode array was fabricated using a lateral p – n junction to inject carriers in the InGaAs active layer. The lateral p – n junction is formed in GaAs epilayers doped only with silicon and grown by molecular beam epitaxy on a patterned GaAs (311)A-oriented substrate. This design allows the use of electrically insulating carrier-confining… (More)