Pablo O. Vaccaro

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A method to make two types of hinges which bend toward opposite directions from the same epitaxial layers using the micro-origami technique is proposed and successfully applied to make standing micro-stages on a GaAs substrate. This method opens a path to fabricate more complex three-dimensional self-positioned micro-machined structures. q 2003 Elsevier(More)
We fabricated quasi-stadium laser diodes whose resonators consist of two concentric curved end mirrors and two straight sidewall mirrors. We observed two lasing modes that correspond to different beam propagations along the cavity axis and along a ring trajectory, and different far-field patterns with wide angular separation. The modes can be selected by(More)
An experimental and numerical investigation of the effect of material anisotropy on the self-positioning of epitaxial nanostructures has been performed. The self-positioning occurs due to a lattice mismatch between two epitaxial material layers (GaAs and In(0.2)Ga(0.8)As) of a hinge. Both materials have cubic crystal symmetry and possess anisotropic(More)
Femtosecond pump-probe experiments on a Ga0.85In0.15As nanocavity enclosed by two Ga(0.85)In(0.15)As/AlAs phonon Bragg mirrors reveal selective generation of terahertz confined acoustic modes and regular folded phonons. Selective generation of the confined modes alone is achievable for laser excitation at certain energies below the mirror absorption edges,(More)
We have observed lasing in a complicated eigenmode of a quasi-stadium laser diode with an unstable resonator consisting of two curved end mirrors obeying an unstable resonator condition and two straight sidewall mirrors. The laser was fabricated by application of a reactive-ion-etching technique to a molecular beam epitaxy-grown graded-index(More)
A light-emitting diode array was fabricated using a lateral p–n junction to inject carriers in the InGaAs active layer. The lateral p–n junction is formed in GaAs epilayers doped only with silicon and grown by molecular beam epitaxy on a patterned GaAs (311)A-oriented substrate. This design allows the use of electrically insulating carrier-confining(More)
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