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A low-power, high-speed SRAM macro is designed in a 65 nm ultra-low-power (ULP) logic technology for mobile applications. The 65 nm strained silicon technology improves transistor performance/leakage(More)
A leading edge 32nm high-k/metal gate transistor technology has been optimized for SoC platform applications that span a wide range of power, performance, and feature space. This technology has been(More)