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By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO2/TiN resistive memory operations. The… Expand
We introduce a figure of merit (FoM) to quantify RRAM read current instability, a complex multi-level RTN-like signal, generally observed in read current. Log(FoM) follows a normal statistical… Expand
The historical evolution of gate stack technology for silicon devices is reviewed to provide insight on the challenges in this technology for scaled nanoscale CMOS devices and non-Si-based devices.
The time evolution of the leakage current in HfO2 based MIM capacitors under constant voltage stress applied either continuously or with periodic interruptions was studied for a range of stress… Expand
The random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) is evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM). Variation… Expand
We study resistive switching memories with Hf or Ti metal oxygen exchange layers.STEM dark field and EELS are used to observe the conductive filament.The filament is a cone-shaped metal-rich region… Expand
Instability of InGaAs channel nMOSFETs with the Al2O3/ ZrO2 gate stack under positive bias stress demonstrates recoverable and unrecoverable components, which can be tentatively assigned to the… Expand
High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed,… Expand
In this work, we report high performance (I<inf>on</inf> ∼1 mA/µm at Ioff 100nA/µm @ 1V Vcc) short channel p-type SiGe/Si FinFETs combining high mobility, low T<inf>inv</inf> (scaled High-k w/o Si… Expand