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Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities
To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from aExpand
High performance silicon N-channel gate-all-around junctionless field effect transistors by strain technology
In this paper, strain effects on silicon n-channel gate-all-around (GAA) jucntionless field effect transistor (JLFET) are studied. By using tensile strain SiN layer, drive currents of the JLFETs showExpand