P. Voyles

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As silicon-based transistors in integrated circuits grow smaller, the concentration of charge carriers generated by the introduction of impurity dopant atoms must steadily increase. Current technology, however, is rapidly approaching the limit at which introducing additional dopant atoms ceases to generate additional charge carriers because the dopants form(More)
We present a procedure for the preparation of physically realistic models of paracrystalline silicon based on a modification of the bond-switching method of Wooten, Winer, and Weaire. The models contain randomly oriented c-Si grains embedded in a disordered matrix. Our technique creates interfaces between the crystalline and disordered phases of Si with an(More)
We have examined the structure and physical properties of paracrystalline molecular dynamics models of amorphous silicon. Simulations from these models show qualitative agreement with the results of recent mesoscale fluctuation electron microscopy experiments on amorphous silicon and germanium. Such agreement is not found in simulations from continuous(More)
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