P. Uma Sathyakam

  • Citations Per Year
Learn More
This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other(More)
Performance of mixed carbon nanotube bundle interconnects are analyzed for subthreshold circuits. As voltage scaling in ULSI ICs lead to performance challenges in delay, power dissipation and the overall performance of interconnects, we simulate two mixed CNT bundle configurations, MCB-1 and MCB-2, to analyze their propagation delay, power dissipated and(More)
  • 1