P. Thioulouse

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Sorry, we do not have enough data to show an influence graph for this author.
Learn More
A novel memory ZnS:Mn ac thin-film EL device is described. The deposition of a photoconducting thin film of amorphous silicon on a conventional EL layer stack induces a hysteretic<tex>L-V</tex>characteristic. Operating characteristics are discussed. Outstanding features are a typical memory margin of 9V peak and electrical switching times (ON and OFF)(More)
  • 1