Sorry, we do not have enough data to show an influence graph for this author.
- Full text PDF available (0)
Journals and Conferences
A novel memory ZnS:Mn ac thin-film EL device is described. The deposition of a photoconducting thin film of amorphous silicon on a conventional EL layer stack induces a hysteretic<tex>L-V</tex>characteristic. Operating characteristics are discussed. Outstanding features are a typical memory margin of 9V peak and electrical switching times (ON and OFF)… (More)